Dr. P. V. Sreenivasa Reddy is joined as a Post-doctoral Fellow at IKST in July 2018. Prier joining to IKST, he joined as junior research fellow under Dr. V. Kanchana, Associate Professor in the department of Physics at Indian Institute of Technology Hyderabad and registered as a Ph.D scholar in the same IITH. He received his Ph.D degree in August 2018.
His research interest is to understand the material properties through Density Functional Theory. He is strongly interested to study magnetic, dynamical and mechanical properties of metals and semiconductors both at ambient and at extreme conditions. More details can be found in attached CV.
Selected List of Publications:
Ab initio study of Fermi surface and dynamical properties of Ni2XAl (X= Ti, V, Zr, Nb, Hf and Ta)
P. V. Sreenivasa Reddy and V. Kanchana, , J. Alloys and Comp., 616, (2014) 527-534.
Predicted superconductivity of Ni2VAl and pressure dependence of superconductivity in Ni2NbX (X = Al, Ga and Sn) and Ni2VAl
P. V. Sreenivasa Reddy, V. Kanchana, G. Vaitheeswaran and David. J. Singh, J. Phys.: Conden. Matter, 28, (2016) 115703.
Electronic topological transitions in Nb3X (X = Al, Ga, In, Ge, and Sn) under compression investigated by first principles calculations
P. V. Sreenivasa Reddy, V. Kanchana, G. Vaitheeswaran, P. Modak and Ashok K. Verma, , J. Appl. Phys., 119, (2016) 075901.
Enhanced superconductivity in the high pressure phase of SnAs studied from first principles
P. V. Sreenivasa Reddy, V. Kanchana, T.E. Millichamp, G. Vaitheeswaran and S. B. Dugdale, , Physica B, 505, (2017) 33-40.
Enhanced superconductivity in SnSb under pressure: a first principles study
P. V. Sreenivasa Reddy and V. Kanchana, , J. Phys.: Conden. Matter, 29, (2017) 405502.
Evidence for the antiferromagnetic ground state of Zr2TiAl: a first-principles study
P. V. Sreenivasa Reddy, V. Kanchana, G. Vaitheeswaran, Andrei V. Ruban and N. E. Christensen, , J. Phys.: Conden. Matter, 29, (2017) 265801.
Structural and low temperature transport properties of Fe2B and FeB systems at high pressure
P. Anand Kumar, A. T. Satya, P. V. Sreenivasa Reddy, M. Sekar, V. Kanchana, G. Vaitheeswaran, Awadhesh Mani, S. Kalavathi and N. V. Chandra Shekar, , J. Phys. Chem. Solids., 109, (2017) 18-25.